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MODIFICATION IN OPTICAL PROPERTIES OF ZNO THIN FILM BY ANNEALING

Aman Jain1, Mohit Johari, Anshul Jain, Praveen Kumar Pandey, Rekha Agrawal

In this work, we have synthesized ZnO thin film on quartz substrate by RF magnetron sputtering method. We annealed these films at three different temperatures of 200oC, 400oC and 600oC. The absorption spectra showed that the band gap of the deposited film was about 3.29 eV. So it confirmed that the film was of ZnO. As temperature increased the band gap of the film decreased. Transmittance spectra revealed that the transparency of the film increased with rise in temperature. Different optical constants such as refractive index, film thickness, band gap, transmittance, extinction coefficient and so on were investigated and compared at different temperatures. Ellipsometry revealed that the thickness of the film was 125 nm