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Analysis of nth Power Law MOSFET Model

Archana Yadav, Gaurav Bhardwaj

In this paper, a simple general yet realistic MOSFET model named nth power law MOSFET model for I-V characteristic of MOSFET in linear and saturation region is proposed. Model can express I-V characteristics of short channel MOSFET’S at least down to 0.12-μm channel length and resistance inserted MOSFET. The model evaluation time is about 1/3 of the evaluation time of the SPICE MOS LEVEL-1model. The model parameter extraction is done by solving single variable equations .solution can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. Model plays a role of a bridge between a complicated MOSFET current characteristics and circuit behaviour in the deep sub -micrometer region.